Simulation of Silicon Oxycarbide Waveguides for Shorter Band Photonics

نویسندگان

چکیده

In this research paper, we design and simulate Silicon Oxycarbide (SiOC) channel waveguides photonic passive device such as directional coupler. SiOC are designed for different values of width height at shorter wavelength band that is 1310 nm window with refractive index (ncore) =2.2 μm SiO2 (nclad) = 1.444 μm. TE TM fundamental mode achieved 1.5 microns 0.5 to understand the single operation waveguides. The minimum bending radius waveguide found be 30 large enough integrate scale devices. Directional coupler measure coupling power between gap 0.6, 0.7 0.8 gives 3dB 20, 40 100 microns. research, silicon oxycarbide presented potential material platform highly efficient

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ژورنال

عنوان ژورنال: Sir Syed University research journal of engineering and technology

سال: 2022

ISSN: ['1997-0641', '2415-2048']

DOI: https://doi.org/10.33317/ssurj.486